| As fired 96% Alumina |
| CLA Surface Roughness (µ-inches) |
<= 35 |
| Thickness Available (inches) |
.010-.250 |
| Dissipation Factor at 1 MHz |
0.0004 |
| Dielectric Constant (k) |
9.5 |
| Thermal Conductivity (W/mK) |
26 |
| Coefficient of Thermal Exp. (ppm/°C) |
6.3-8.0 (25-1000°C) |
| Applications |
Low to medium power DC & RF circuits |
| |
| As fired 99.6% Alumina |
| CLA Surface Roughness (µ-inches) |
< 4 |
| Thickness Available (inches) |
.005-.040 |
| Dissipation Factor at 1 MHz |
0.0001 |
| Dielectric Constant (k) |
9.9 |
| Thermal Conductivity (W/mK) |
30 |
| Coefficient of Thermal Exp. (ppm/°C) |
7.0-8.3 (25-1000°C) |
| Applications |
Low to medium power DC & RF circuits |
| |
| Polished 99.6% Alumina |
| CLA Surface Roughness (µ-inches) |
< 2 |
| Thickness Available (inches) |
.004-.040 |
| Dissipation Factor at 1 MHz |
0.0001 |
| Dielectric Constant (k) |
9.9 |
| Thermal Conductivity (W/mK) |
30 |
| Coefficient of Thermal Exp. (ppm/°C) |
7.0-8.3 (25-1000°C) |
| Applications |
Low to medium power RF and Microwave circuits |
| |
| Lapped Aluminum Nitride |
| CLA Surface Roughness (µ-inches) |
25 |
| Thickness Available (inches) |
.004-.120 |
| Dissipation Factor at 1 MHz |
0.001 |
| Dielectric Constant (k) |
8.6 |
| Thermal Conductivity (W/mK) |
170 min |
| Coefficient of Thermal Exp. (ppm/°C) |
4.6 at (25-300°C) |
| Applications |
High power DC/RF/microwave circuits |
| |
| Polished Aluminum Nitride |
| CLA Surface Roughness (µ-inches) |
< 3 |
| Thickness Available (inches) |
.004-.080 |
| Dissipation Factor at 1 MHz |
0.0005 |
| Dielectric Constant (k) |
8.6 |
| Thermal Conductivity (W/mK) |
170 min |
| Coefficient of Thermal Exp. (ppm/°C) |
4.6 (25-300°C) |
| Applications |
High power DC/RF/microwave circuits |
| |
| Polished 99.5% Beryllium-Oxide |
| CLA Surface Roughness (µ-inches) |
< 3 |
| Thickness Available (inches) |
.007-.080 |
| Dissipation Factor at 1 MHz |
0.0004 |
| Dielectric Constant (k) |
6.5 |
| Thermal Conductivity (W/mK) |
250 min |
| Coefficient of Thermal Exp. (ppm/°C) |
6.4-8.6 (25-1000°C) |
| Applications |
High power DC/RF/microwave circuits |
| |
| Ferrite/Garnet |
| CLA Surface Roughness (µ-inches) |
4 - 40 |
| Thickness Available (inches) |
.010 and up |
| Dissipation Factor at 1 MHz |
.00015 - .0025 |
| Dielectric Constant (k) |
9.0 - 15.5 |
| Thermal Conductivity (W/mK) |
.7 - 4.5 |
| Coefficient of Thermal Exp. (ppm/°C) |
2.4 - 10.8 |
| Applications |
Microwave, circulators, isolators, components |
| |
| Borosilicate Glass |
| CLA Surface Roughness (µ-inches) |
< 3.9x10-8 |
| Thickness Available (inches) |
0.7mm - 25.4mm |
| Dissipation Factor at 1 MHz |
.00037 |
| Dielectric Constant (k) |
4 |
| Thermal Conductivity (W/mK) |
1.2 |
| Coefficient of Thermal Exp. (ppm/°C) |
3.25 (through 300°C) |
| Applications |
Optical windows, biomedical |
| |
| Sapphire |
| CLA Surface Roughness (µ-inches) |
< .1 |
| Thickness Available (inches) |
.003-.250 |
| Dissipation Factor at 1 MHz |
0.00086/0.0003 |
| Dielectric Constant (k) |
9.3-11.4 |
| Thermal Conductivity (W/mK) |
40 |
| Coefficient of Thermal Exp. (ppm/°C) |
A plane at 25°C 5.3 |
| Applications |
Optical |
| |
| Polished Fused Silica/Z-Cut Quartz |
| CLA Surface Roughness (µ-inches) |
< .1 |
| Thickness Available (inches) |
.003-.040 |
| Dissipation Factor at 1 MHz |
0.000015 |
| Dielectric Constant (k) |
3.8 |
| Thermal Conductivity (W/mK) |
1.4 |
| Coefficient of Thermal Exp. (ppm/°C) |
0.56 |
| Applications |
High frequency circuits requiring extremely low loss performance |
| |
| Silicon |
| CLA Surface Roughness (µ-inches) |
7.8 x 10-7 |
| Thickness Available (inches) |
.25mm - .5mm |
| Dissipation Factor at 1 MHz |
.005 |
| Dielectric Constant (k) |
11.8 |
| Thermal Conductivity (W/mK) |
125 |
| Coefficient of Thermal Exp. (ppm/°C) |
2.5 |
| Applications |
Optical, medical, IR, sensors, components |
| |
| Polished Titanates |
| CLA Surface Roughness (µ-inches) |
< 3 |
| Thickness Available (inches) |
.005-.080 |
| Dissipation Factor at 1 MHz |
0.0004 |
| Dielectric Constant (k) |
38-200 |
| Thermal Conductivity (W/mK) |
1.8-4.2 |
| Coefficient of Thermal Exp. (ppm/°C) |
5.8 |
| Applications |
RF & microwave circuits requiring high Q |
| |
